1/7 dsf20545sf www.dynexsemi.com replaces january 2000 version, ds4152-4.0 ds4152-5.0 june 2004 applications induction heating a.c. motor drives inverters and choppers welding high frequency rectification ups features double side cooling high surge capability low recovery charge voltage ratings key parameters v rrm 4500v i f(av) 1256a i fsm 16000a q r 1250 c t rr 7.0 s 4500 4400 4300 4200 4100 4000 dsf20545sf45 dsf20545sf44 dsf20545sf43 dsf20545sf42 dsf20545sf41 dsf20545sf40 conditions v rsm = v rrm + 100v lower voltage grades available. type number repetitive peak reverse voltage v rrm v outline type code: cb450. see package details for further information. dsf20545sf fast recovery diode advance information ordering information when ordering, select the required part number shown in the voltage ratings selection table, e.g.: dsf20545sf43 note: please use the complete part number when ordering and quote this number in any future correspondance relating to your order. fig. 1 package outline
2/7 www.dynexsemi.com dsf20545sf surge ratings conditions max. units 16 ka 1280 x 10 3 a 2 s i 2 t for fusing i 2 t surge (non-repetitive) forward current i fsm parameter symbol 10ms half sine; with 0% v rrm, t j = 150 o c 12.8 ka 819.2 x 10 3 a 2 s i 2 t for fusing i 2 t surge (non-repetitive) forward current i fsm 10ms half sine; with 50% v rrm, t j = 150 o c -ka -a 2 s i 2 t for fusing i 2 t surge (non-repetitive) forward current i fsm 10ms half sine; with 100% v rrm, t j = 150 o c current ratings symbol parameter conditions double side cooled i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current single side cooled (anode side) i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current units max. half wave resistive load, t case = 65 o c 1256 a t case = 65 o c 1971 a t case = 65 o c 1765 a half wave resistive load, t case = 65 o c 995 a t case = 65 o c 1552 a t case = 65 o c 1335 a definition of k factor and q ra1 0.5x i rr i rr di r /dt t 1 t 2 q ra1 = 0.5x i rr (t 1 + t 2 ) k = t 1 /t 2
3/7 dsf20545sf www.dynexsemi.com thermal and mechanical data dc conditions max. units o c/w - 0.032 anode dc clamping force 15kn with mounting compound thermal resistance - case to heatsink r th(c-h) 0.004 double side - single side thermal resistance - junction to case r th(j-c) single side cooled symbol parameter - 0.008 o c/w o c/w cathode dc - 0.032 o c/w double side cooled - 0.022 o c/w t stg storage temperature range -55 150 o c kn 21.5 17.5 clamping force - t vj virtual junction temperature on-state (conducting) - 150 o c min. t rr 50 symbol typ. units parameter v fm forward voltage i rrm peak reverse current reverse recovery time q ra1 recovered charge (50% chord) i rm reverse recovery current k soft factor v to threshold voltage r t slope resistance v frm forward recovery voltage di/dt = 1000a/ s, t j = 125 o c - 160 v at t vj = 150 o c - 0.47 m ? at t vj = 150 o c - 1.36 v 1.8 - - - 400 a - 1250 c -7.0 s at v rrm , t case = 150 o c-ma at 1800a peak, t case = 25 o c-2.1v conditions max. i f = 1000a, di rr /dt = 100a/ s t case = 150 o c, v r = 100v characteristics
4/7 www.dynexsemi.com dsf20545sf curves fig.2 maximum (limit) forward characteristics fig.3 maximum (limit) forward characteristics fig.4 transient forward voltage vs rate of rise of forward current fig.5 recovered charge 500 1000 1500 2000 2500 3000 instantaneous forward current i f - (a) 1.0 1.5 2.0 2.5 3.0 instantaneous forward voltage v f - (v) measured under pulse conditions t j = 150?c t j = 25?c 3500 4000 100 200 300 400 500 instantaneous forward current i f - (a) 0.75 1.0 1.25 1.5 instantaneous forward voltage v f - (v) measured under pulse conditions tj = 150 ? c tj = 25 ? c 0 50 100 150 200 250 transient forward votage v fp - (v) 0 500 1000 1500 2000 rate of rise of forward current di f /dt - (a/s) t j = 125 ? c limit t j = 25 ? c limit current waveform voltage waveform v fr y x di = y dt x 1101001000 rate of rise of reverse current di r /dt - (a/s) 1000 100 10000 100000 reverse recovered charge q rr - (c) conditions: t j = 150 ? c, v r = 100v i f = 2000a i f = 1000a i f = 500a i f = 200a i f = 100a i rr q s t p = 1ms i f di r /dt q s = 50s 0
5/7 dsf20545sf www.dynexsemi.com fig.6 typical reverse recovery current vs rate of rise of forward current fig.7 maximum (limit) transient thermal impedance - junction to case - (?c/w) 1 10 100 1000 rate of rise of reverse current di r /dt - (a/s) 100 10 1000 10000 reverse recovery current i rr - (a) conditions: t j = 150 ? c, v r = 100v i f = 2000a i f = 1000a i f = 500a i f = 200a i f = 100a 0.1 0.01 0.001 thermal impedance - junction to case, z th(j-c) - ( ? c/w) 0.001 0.01 0.1 1.0 10 time - (s) double side cooled
6/7 www.dynexsemi.com dsf20545sf package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. 2 holes ? 3.6x2.0 deep (in both electrodes) ? 48 nom 27.0 25.4 cathode anode ? 48 nom ? 76 max nominal weight: 500g clamping force: 19.6kn 10% package outline type code: cb450
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 ? dynex semiconductor 2003 technical documentation ? not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com stresses above those listed in this data sheet may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed.
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